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DA2J107

Panasonic Semiconductor

Diode

This product complies with the RoHS Directive (EU 2002/95/EC). DA2J107 Silicon epitaxial planar type For speed switchin...


Panasonic Semiconductor

DA2J107

File Download Download DA2J107 Datasheet


Description
This product complies with the RoHS Directive (EU 2002/95/EC). DA2J107 Silicon epitaxial planar type For speed switching circuits DA3X107K in SMini2 type package  Features  High reverse voltage VR  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Package  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: B1  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Repetitive peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) *: 1 t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 300 300 100 225 500 150 –55 to +150 Unit V V mA mA mA °C °C  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF IR Ct trr IF = 100 mA VR = 300 V VR = 6 V, f = 1 MHz IF = 10 mA, VR = 6 V, Irr = 0.25 × IR Conditions Min Typ Max 1.2 1.0 3.0 60 Unit V µA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 20 MHz 3. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tr 10% tp t IF Output Pulse trr t A VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0...




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