DC8050S

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DC8050S DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PD TJ TSTG o C) Rating 25 20 5 700 625 +150 -55 to +150 Unit V V V mA mW o o Symbol .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 25 20 5 85 150 2% Typ 170 - Max 1 0.1 0.6 1 500 10 Unit V V V µA µA V V MHz pF Test Conditions IC=10µA IC=1mA IE=10µA VCB=20V VEB=6V IC=0.5A, IB=50mA IC=150mA, VCE=1V IC=150mA, VCE=1V IC=500mA, VCE=1V IC=20mA, VCE=10V, f=100MHz VCB=10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) VCE(sat) VBE(on) hFE1 hFE2 fT ...