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DDB6U85N16

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Rectifier Diode

Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 85 N 16 (ISOPACK) Elek...


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DDB6U85N16

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Description
Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 85 N 16 (ISOPACK) Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzensperrspannung non-repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert (pro Element) RMS forward current (per chip) Ausgangsstrom output current Stoßstrom-Grenzwert surge forward current Grenzlastintegral I²t-value Tvj = - 40°C...Tvj max Tvj = + 25°C...Tvj max TC = 100°C TC = 84°C TA = 45°C, KM 11 TA = 45°C, KM 33 TA = 35°C, KM 14 (VL = 45l/s) TA = 35°C, KM 33 (VL = 90l/s) Tvj = 25°C, tp = 10ms Tvj = Tvj max, tp = 10ms Tvj = 25°C, tp = 10ms Tvj = Tvj max, tp = 10ms VRRM VRSM IFRMSM Id IFSM I²t Charakteristische Werte / Characteristic values Durchlaßspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand forward slope resistance Sperrstrom reverse current Isolations-Prüfspannung insulation test voltage Tvj = Tvj max, iF = 100A Tvj = Tvj max Tvj = Tvj max Tvj = Tvj max, vR = VRRM RMS, f = 50Hz, t = 1min RMS, f = 50Hz, t = 1sec vF V(TO) rT iR VISOL Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case pro Modul / per module, Θ = 120°rect pro Element / per chip, Θ = 120°rect pro Modul / per module, DC pro Element / per chip, DC RthJC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Mo...




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