DF10G6M4N

ESD Protection Diodes Silicon Epitaxial Planar DF10G6M4N DF10G6M4N 1. Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit DFN10 1 : I/O 1 2 : I/O 2 3 : GND 4 : I/O 3 5 : I/O 4 6 : NC 7 : NC 8 : NC 9 : NC 10 : NC 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage (IEC61000-4-2)(Air) VESD (Note 1) ±20 ±20 kV Peak pulse power (tp = 8/20 µs) Peak pulse current (tp = 8/20 µs) Junction temperature Storage temperature PPK IPP (Note 2) Tj Tstg 30 2 150 -55 to 150 W A   Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to IEC61000-4-5. ©...