CATHODE MARK 0.1 0.8±0.05 0.1
1.0±0.05
TOSHIBA Diodes for Protecting against ESD
DF2B6.8FS
DF2B6.8FS
Product for Use Only as Protection against Electrostatic Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application.
Unit in mm 0.6±0.05
A
Abusolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Power dissipation
P 150*
Junction tempe.
Diode
CATHODE MARK 0.1 0.8±0.05 0.1
1.0±0.05
TOSHIBA Diodes for Protecting against ESD
DF2B6.8FS
DF2B6.8FS
Product for Use Only as Protection against Electrostatic Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application.
Unit in mm 0.6±0.05
A
Abusolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Power dissipation
P 150*
Junction temperature
Tj 150
Storage temperature range
Tstg −55 to 150
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimension of 4 mm × 4 mm.
Unit
mW °C °C
0.2 0.07M A ±0.05
0.1±0.05 0.48+-00..0032
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
fSC
JEDEC JEITA TOSHIBA
― ― 1-1L1A
Weight: 0.6 mg (typ.)
Pad Dimension (Reference) Unit : mm
0.85 0.26
0.21
Electrical Characteristics (Ta = 25°C)
Characteristic
Reverse stand-off v.