TOSHIBA Diodes for Protecting against ESD
DF2S12FU
Product for Use Only as Protection against Electrostatic Discharge (E...
TOSHIBA Diodes for Protecting against ESD
DF2S12FU
Product for Use Only as Protection against Electrostatic Discharge (ESD)
* This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant
voltage diode application.
Two-pin ultra-small packages are suitable for higher mounting densities.
Small total capacitance: CT = 15pF (typ.)
DF2S12FU
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation Junction temperature Storage temperature range
Symbol
Rating
Unit
P
150
mW
Tj
125
°C
Tstg
−55 to 125
°C
USC
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 4.5 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener
voltage Dynamic impedance Knee dynamic impedance Reverse current Total capacitance
Symbol
VZ ZZ ZZK IR CT
Test Condition
IZ = 5mA IZ = ...