DF2S5.6FS

www.DataSheet4U.com DF2S5.6FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S5.6FS Diodes for Protecting against ESD The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Lead (Pb) - free CATHODE MARK Unit in mm 0.6±0.05 0.1 Zener voltage corresponds to E24 series. A Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150* 150 −55~150 Unit mW °C °C 0.1 0.07M A 0.2 ±0.05 0.8±0.05 0.1±0.05 *: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm. 0.48+0.02 -0.03 Pad Dimension（Reference） 0.85 0.26 0.21 Unit : mm fSC JEDEC JEITA TOSHIBA ― ― 1-1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dynamic impedance Reverse current Total capacitance (between Cathode and Anode) Symbol VZ ZZ IR CT Test Condition IZ = 5mA IZ = 5mA VR = 3.5V VR = 0 V, f = 1 MHz Min 5.3 ― ― ― Typ. 5.6 ― ― 40 Max 6.0 30 1 ― Unit V Ω μA pF Guaranteed Level of ESD Immunity Test Condition IEC61000-4-2 (Contact discharge) ESD Immunity Level Marking Equivalent Circuit (Top View) .6 ±30kV Criterion: No damage to device elements 1 2005-08-29 1.0±0.05 Maximum Ratings (Ta = 25°C) www.DataSheet4U.com DF2S5.6FS IZ - VZ CT - VR 100 100 ZENER CURRENT IZ (mA) Ta=25°C 10 TOTAL CAPACITANCE CT(pF) f=1MHz Ta=25°C 1 10 0 0.1 0.01 0 0 1 2 3 4 5 6 7 8 ZENER VOLTAGE VZ (V) 9 10 1 0 ...