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DF2S5.6S
TOSHIBA Diodes for Protecting against ESD
DF2S5.6S
Product for Use Only as Protection aga...
www.DataSheet4U.com
DF2S5.6S
TOSHIBA Diodes for Protecting against ESD
DF2S5.6S
Product for Use Only as Protection against Electrostatic Discharge (ESD).
*This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant
voltage diode application. Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150* 150 −55~150 Unit mW °C °C
CATHODE MARK
z 2terminal ultra small package suitable for mounting on small space.
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
JEDEC JEITA TOSHIBA
― ― 1-1K1A
Electrical Characteristics (Ta = 25°C)
Characteristic Zener
voltage Dynamic impedance Reverse current Total capacitance Symbol VZ ZZ IR CT Test Condition IZ = 5 mA IZ = 5 mA VR = 3.5 V VR = 0 V, f = 1 MHz
Weight: 0.0011 g (typ.)
Min 5.3 ― ― ― Typ. 5.6 ― ― 40 Max 6.0 30 1 ― Unit V Ω μA pF
Guaranteed Level of ESD Immunity
Test Condition IEC61000-4-2 (contact discharge) ESD Immunity Level
Marking
6.
Equivalent Circuit (Top View)
±30 kV
Criterion: No damage to device elements
1
2007-08-20
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DF2S5.6S
CT - VR
IZ - VZ
100 f = 1MHz Ta = 25°C Ta = 25°C ZENER CURRENT IZ (mA) 10
100
TOTAL CAPACITANCE CT(pF)
10
1
0 0.1
1 0 1 2 3 4 5 6
0.01 0 0 1 2 3 4 5 6 7 8 9 10
REVERSE
VOLTAGE VR(V)
ZENER
VOLTAGE VZ (V)
2
2007-08-20
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