ESD Protection Diodes Silicon Epitaxial Planar
DF2S5M4SL
DF2S5M4SL
1. Applications
• ESD Protection
Note: This product...
ESD Protection Diodes Silicon Epitaxial Planar
DF2S5M4SL
DF2S5M4SL
1. Applications
ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to,
voltage regulation.
2. Packaging and Internal Circuit
1: Cathode 2: Anode
SL2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge
voltage (IEC61000-4-2)(Contact) Electrostatic discharge
voltage (IEC61000-4-2)(Air)
VESD
(Note 1)
±20
kV
Peak pulse power (tp = 8/20 µs) Peak pulse current (tp = 8/20 µs) Junction temperature Storage temperature
PPK IPP (Note 2) Tj Tstg
30 2.0 150 -55 to 150
W A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2. Note 2: According to IEC61000-4-5.
©2016 Toshiba Corporation
1
Start of commercial production
2016-03
...