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DF2S6.8FS

Toshiba Semiconductor

ESD Protection Diodes

ESD Protection Diodes Silicon Epitaxial Planar DF2S6.8FS DF2S6.8FS 1. Applications • ESD Protection Note: This product...


Toshiba Semiconductor

DF2S6.8FS

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Description
ESD Protection Diodes Silicon Epitaxial Planar DF2S6.8FS DF2S6.8FS 1. Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit SOD-923 1: Cathode 2: Anode 1: Cathode 2: Anode fSC The SOD-923 package is recommended. Package Product name SOD-923 fSC DF2S6.8FS,L3M (Note 1) DF2S6.8FS,L3J , DF2S6.8FS,L3F Note 1: The product name of the devices housed in the SOD-923 package are suffixed with the "M". Start of commercial production 2003-04 1 2014-07-09 Rev.5.0 DF2S6.8FS 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) VESD ±30 kV Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the applicati...




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