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DF2S6.8S Datasheet

Part Number DF2S6.8S
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Diodes for Protecting against ESD
Datasheet DF2S6.8S DatasheetDF2S6.8S Datasheet (PDF)

DF2S6.8S TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8S Product for Use Only as Protection against Electrostatic Discharge (ESD). * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z 2terminal ultra small package suitable for mounting on small space. CATHODE MARK Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Power dissi.

  DF2S6.8S   DF2S6.8S






Part Number DF2S6.8S
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description ESD Protection Diodes
Datasheet DF2S6.8S DatasheetDF2S6.8S Datasheet (PDF)

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8S DF2S6.8S Product for Use Only as Protection against Electrostatic Discharge (ESD). Unit: mm CATHODE MARK * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z 2terminal ultra small package suitable for mounting on small space. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbo.

  DF2S6.8S   DF2S6.8S







Diodes for Protecting against ESD

DF2S6.8S TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8S Product for Use Only as Protection against Electrostatic Discharge (ESD). * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z 2terminal ultra small package suitable for mounting on small space. CATHODE MARK Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150* 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ⎯ temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA ⎯ operating temperature/current/voltage, etc.) are within the TOSHIBA 1-1K1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.0011 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic www.DataSheet4U.net Symbol VZ ZZ IR CT Test Condition IZ = 5 mA IZ = 5 mA VR = 5 V VR = 0 V, f.


2011-05-17 : 1K3    1K3    2SC4630LS    52520-xxxx    5252    FLB0750    FLB0275    FLB0300    FLB0350    FLB0400   


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