DF3A6.8FE

www.DataSheet4U.com DF3A6.8FE TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type DF3A6.8FE Diodes for Protecting Against ESD Unit in mm l Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. l Zener voltage correspond to E24 series. Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 100 125 −55~125 Unit mW °C °C JEDEC EIAJ TOSHIBA Weight: 2.3 mg ― ― 1-2SA1A Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Symbol VZ ZZ ZZK IR Test Circuit ― ― ― ― Test Condition IZ = 5mA IZ = 5mA IZ = 0.5mA VR = 5V Min 6.4 ― ― ― Typ. 6.8 10 30 ― Max 7.2 ― ― 0.5 Unit V Ω Ω µA Guaranteed Level of Esd Immunity Test Condition IEC61000-4-2 (Contact discharge) ESD Immunity Level ±30kV Marking Equivalent Circuit (Top View) 000707EAA2 · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human l...