isc P-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=-17A@ TC=25℃ ·Drain Source Voltage-
: VDSS=-40V(Min) ·Stati...
isc P-Channel
MOSFET Transistor
FEATURES ·Drain Current –ID=-17A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=-40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =75mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
-40
V
VGS
Gate-Source
Voltage-Continuous
-15,+0
V
ID
Drain Current-Continuous
-17
A
PD
Total Dissipation @TC=25℃
48
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.6
℃/W
DJR0417
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isc P-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID=- 0.1mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=-1mA
RDS(on) Drain-Source On-Resistance
VGS= -10V; ID=-8.5A
IGSS
Gate-Body Leakage Current
VGS= -15V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=-40V; VGS= 0
VSD
Forward On-
Voltage
IS=-1mA; VGS= 0
DJR0417
MIN MAX UNIT
-40
V
-1
-2.5
V
75
mΩ
-100
uA
-100
μA
-16
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time witho...
