DK48N88
®
Pb Free Plating Product
DK48N88
Pb
N-Channel Trench Process Power MOSFET Transistors
General Description...
DK48N88
®
Pb Free Plating Product
DK48N88
Pb
N-Channel Trench Process Power
MOSFET Transistors
General Description
The DK48N88 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features
● VDS=70V；ID=88A@ VGS=10V； RDS(ON)<5.2mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
DK48N88
(TO-220 HeatSink)
G DS
Schematic Diagram
VDSS = 70V IDSS = 88A RDS(ON) = 4.8mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source
Voltage (VGS=0V）
VGS Gate-Source
Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC) IDM (pluse)
Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery
Voltage
PD Maximum Power Dissipation(Tc=25℃)
Derating Factor
EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=48.5A
Rev.05 © 2006 Thinki Semiconductor Co.,Ltd.
Value
70 ±25 88 85 320 30 145 1.9 590 -55 To 175
Unit
V V A A A V/ns W W/℃ mJ ℃
Page 1/2 http://www.thinkisemi.com/
Table 2...
