DKG1020

SANKEN ELECTRIC DKG1020 Features Low on-state resistance Built-in gate protection diode SMD PKG Package TO252 http://www.sanken-ele.co.jp Aug. 2011 Applications DC / DC converter Switching Internal Equivalent Circuit (2) (1) Key Specifications V(BR)DSS =100V (ID=100uA) R DS(ON)=52 mΩ max. (VGS=10V, ID=10A) R DS(ON)=59 mΩ max. (VGS=4.5V, ID=10A) (3) Absolute maximum ratings Characteristic Drain to Source Voltage Symbol VDSS Rating 100 (Ta=25°C) Unit V Gate to Source Voltage VGSS ±20 V Continuous Drain Current ID ±20 A Maximum Power Dissipation Single Pulse Avalanche Energy PD EAS *1 40 (Tc=25°C) W 62.5 mJ Channel Temperature Tch 150 °C Storage Temperature Maximum Drain to Source dv/dt Tstg dv/dt 1*1 -55 to +150 °C 0.6 V/ns Peak diode recovery dv/dt dv/dt 2*2 5 V/ns Peak diode recovery di/dt di/dt*2 100 A/μs *1 VDD=14V, L=1mH, IL=11A, unclamped, See Fig.1 *2 IsD=20A, See Fig.2 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1 SANKEN ELECTRIC http://www.sanken-ele.co.jp DKG1020 Characteristic Drain to Source breakdown Voltage Electrical characteristics Symbol Test Conditions V(BR)DSS ID=100μA,VGS=0V MIN 100 Aug. 2011 Limits TYP (Ta=25°C) Unit MAX V Gate to Source Leakage Current IGSS ...