SANKEN ELECTRIC
DKG1020
Features Low on-state resistance Built-in gate protection diode SMD PKG
Package
TO252
http:/...
SANKEN ELECTRIC
DKG1020
Features Low on-state resistance Built-in gate protection diode SMD PKG
Package
TO252
http://www.sanken-ele.co.jp Aug. 2011
Applications DC / DC converter Switching
Internal Equivalent Circuit
(2)
(1)
Key Specifications V(BR)DSS =100V (ID=100uA) R DS(ON)=52 mΩ max. (VGS=10V, ID=10A) R DS(ON)=59 mΩ max. (VGS=4.5V, ID=10A)
(3)
Absolute maximum ratings
Characteristic Drain to Source
Voltage
Symbol VDSS
Rating 100
(Ta=25°C) Unit
V
Gate to Source
Voltage
VGSS
±20
V
Continuous Drain Current
ID
±20
A
Maximum Power Dissipation Single Pulse Avalanche Energy
PD EAS *1
40 (Tc=25°C)
W
62.5
mJ
Channel Temperature
Tch
150
°C
Storage Temperature Maximum Drain to Source dv/dt
Tstg dv/dt 1*1
-55 to +150
°C
0.6
V/ns
Peak diode recovery dv/dt
dv/dt 2*2
5
V/ns
Peak diode recovery di/dt
di/dt*2
100
A/μs
*1 VDD=14V, L=1mH, IL=11A, unclamped, See Fig.1 *2 IsD=20A, See Fig.2
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1
SANKEN ELECTRIC
http://www.sanken-ele.co.jp
DKG1020
Characteristic Drain to Source breakdown
Voltage
Electrical characteristics
Symbol
Test Conditions
V(BR)DSS ID=100μA,VGS=0V
MIN 100
Aug. 2011
Limits TYP
(Ta=25°C) Unit
MAX V
Gate to Source Leakage Current
IGSS
...