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DMB53D0UDW Datasheet

Part Number DMB53D0UDW
Manufacturers Diodes
Logo Diodes
Description N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
Datasheet DMB53D0UDW DatasheetDMB53D0UDW Datasheet (PDF)

DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) • ESD Protected MOSFET Gate up to 2kV • "Green" Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • C.

  DMB53D0UDW   DMB53D0UDW






N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) • ESD Protected MOSFET Gate up to 2kV • "Green" Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Alloy 42 Lead frame. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 5 • Ordering Information: See Page 5 • Weight: 0.006 grams (approximate) SOT-363 D2 Q1 B E Q2 ESD protected gate up t.


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