DMBTA56

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBTA56 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. Pinning 1 = Base 2 = Emitter 3 = Collector .020(0.50) .012(0.30) SOT-23 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -80 -80 -4 -500 225 +150 -55 to +150 Unit V V V mA mW o o 1 2 .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO (1) Min -80 -80 -4 50 50 100 2% Typ - Max -100 -100 -0.25 -1.2 - Unit V V V nA nA V V MHz Test Conditions IC=-100µA IC=-1mA IE=-100µA VCB=-80V VCE=-60V IC=-100mA, IB=-10mA IC=-100mA, VCE=-1V IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V IC=-...