DMG3N60SJ3

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 3.5Ω @ VGS = 10V ID @TC = +25°C 2.8A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features and Benefits  Low On-Resistance  High BVDSS Rating for Power Application  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: TO251  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.33 grams (Approximate) TO251 (Type TH) Top View Bottom View GDS Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Notes: Part Number DMG3N60SJ3 Case TO251 (Type TH) Packaging 75 Pieces/Tube 1. EU Di...