DatasheetsPDF.com

DMG9N65CTI Datasheet

Part Number DMG9N65CTI
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet DMG9N65CTI DatasheetDMG9N65CTI Datasheet (PDF)

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-.

  DMG9N65CTI   DMG9N65CTI






Part Number DMG9N65CTI
Manufacturers Diodes
Logo Diodes
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet DMG9N65CTI DatasheetDMG9N65CTI Datasheet (PDF)

Product Summary V(BR)DSS 650V RDS(ON) 1.3Ω @ VGS = 10V Package ITO-220AB ID TC = +25°C 9.0A Description This new generation complementary dual MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Applications  Motor Control  Backlighting  DC-DC Converters  Power Management Functions DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low Input Capacitance  High BVDss Rating for Power Application  Low Input/Outpu.

  DMG9N65CTI   DMG9N65CTI







N-Channel MOSFET

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 13 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.84 ℃/W DMG9N65CTI isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 4.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 VSD Forward On-Voltage IS= 1A; VGS= 0 DMG9N65CTI MIN MAX UNIT 650 V 3.0 5.0 V 1.3 Ω ±100 nA 1.0 μA 1.0 V NOTICE: ISC reserves the rights to make changes of the .


2021-05-09 : DMG10N60SCT    DMG10N60SCT    DMG9N65CT    DMG9N65CTI    DMG8N65SCT    DMG8N65SCT    DMG7N65SJ3    DMG7N65SJ3    DMG7N65SCTI    DMG7N65SCTI   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)