ADVANCE INFORMATION NEW PRODUCT
DMN2026UVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(ON) Max
24m @ VGS = 4.5V 32m @ VGS = 2.5V
ID TA = +25°C
6.2A
Features and Benefits
Low Input Capacitance Low On-Resistance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation MOSFET is designed to minimize the on-state resista.
N-CHANNEL MOSFET
ADVANCE INFORMATION NEW PRODUCT
DMN2026UVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(ON) Max
24m @ VGS = 4.5V 32m @ VGS = 2.5V
ID TA = +25°C
6.2A
Features and Benefits
Low Input Capacitance Low On-Resistance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DC-DC Converters Power Management Functions Backlighting
Mechanical Data
Case: TSOT26 Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish Annealed over .