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DMN2400UFB Datasheet

Part Number DMN2400UFB
Manufacturers Diodes
Logo Diodes
Description N-CHANNEL MOSFET
Datasheet DMN2400UFB DatasheetDMN2400UFB Datasheet (PDF)

Product Summary V(BR)DSS 20V RDS(ON) max 0.55Ω @ VGS = 4.5V 0.75Ω @ VGS = 2.5V ID max TA = +25°C 0.75A 0.63A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.  Battery Charging  Power Management Functions  DC-DC Converters  Portable Power Adaptors X1-DFN1006-3 DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefit.

  DMN2400UFB   DMN2400UFB






Part Number DMN2400UFDQ
Manufacturers Diodes
Logo Diodes
Description N-CHANNEL MOSFET
Datasheet DMN2400UFB DatasheetDMN2400UFDQ Datasheet (PDF)

DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 20V RDS(ON) 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V ID TA = +25°C 0.9A 0.7A 0.5A 0.3A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Power Management Functions  Battery Operated Systems and So.

  DMN2400UFB   DMN2400UFB







Part Number DMN2400UFD
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMN2400UFB DatasheetDMN2400UFD Datasheet (PDF)

NEW PRODUCT Product Summary BVDSS 20V RDS(ON) MAX 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V NOT RECOMMENDED FOR NEW DESIGN USE DMN2450UFD DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ID MAX TA = +25°C 0.9A 0.7A 0.5A 0.3A  Low On-Resistance  Very low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. .

  DMN2400UFB   DMN2400UFB







Part Number DMN2400UFB4
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMN2400UFB DatasheetDMN2400UFB4 Datasheet (PDF)

DMN2400UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage UItra-Small Surface Mount Package Ultra-Low Package Profile, 0.4mm Maximum Package Height Lead Free By Design/RoHS Compliant (Note 1) ESD Protected up to 1.5kV "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Mechanical Data • • • • • • Case: DFN1006H4-3 Case Material: Molded Pla.

  DMN2400UFB   DMN2400UFB







N-CHANNEL MOSFET

Product Summary V(BR)DSS 20V RDS(ON) max 0.55Ω @ VGS = 4.5V 0.75Ω @ VGS = 2.5V ID max TA = +25°C 0.75A 0.63A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.  Battery Charging  Power Management Functions  DC-DC Converters  Portable Power Adaptors X1-DFN1006-3 DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected up to 1.5kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: X1-DFN1006-3  Case Material: Molded Plastic, "Green" Molding Compound; UL Flamma.


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