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DMN3033LSD
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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www.DataSheet.co.kr
DMN3033LSD
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features
Dual N-Channel
MOSFET Low On-Resistance 22mΩ @ VGS = 10V 33mΩ @ VGS = 4.5V Low Gate Threshold
Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability
SOP-8L
Mechanical Data
Case: SOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072grams (approximate)
D1
S1 G1 S2 G2
TOP VIEW Internal Schematic
D2
D1 D1 D2 D2
G1
G2
TOP VIEW
S1
N-Channel
MOSFET
S2
N-Channel
MOSFET
Maximum Ratings
Drain-Source
Voltage Gate-Source
Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3)
@TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25°C TA = 70°C ID IDM Value 30 ±20 6.9 5.8 30 Units V V A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes: 1. 2. 3. 4.
Symbol PD RθJA TJ, TSTG
Value 2 62.5 -...