NEW PRNOEDWUCPTRODUCT
DMN67D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V
RDS(ON) max
5.0Ω @ VGS = 10V 7.5Ω @ VGS = 5V
ID max TA = +25°C
230mA
190mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor Control Power Management Functions
SOT363
D1
Features
Dual N-Channel MOSFET Low On-Resis.
N-Channel MOSFET
NEW PRNOEDWUCPTRODUCT
DMN67D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V
RDS(ON) max
5.0Ω @ VGS = 10V 7.5Ω @ VGS = 5V
ID max TA = +25°C
230mA
190mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor Control Power Management Functions
SOT363
D1
Features
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363 Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D2
D2 G1 S1
G1
Top View
G2
S1
Equivalent Circuit
S2
S2 G2 D1
Top View Pin out
Ordering Information (Note 4)
Notes:
Part Number DMN67D8LDW-7 DMN67D8LDW-13
Case SOT363 SOT363
Packaging 3000/Tape & Reel 10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU.