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DMP213DUFA

Diodes

P-Channel MOSFET

Product Summary V(BR)DSS -25V RDS(ON) 10Ω @ VGS = -4.5V 13Ω @ VGS = -2.7V ID TA = +25°C -166mA -138mA Description Th...


Diodes

DMP213DUFA

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Description
Product Summary V(BR)DSS -25V RDS(ON) 10Ω @ VGS = -4.5V 13Ω @ VGS = -2.7V ID TA = +25°C -166mA -138mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Load Switch Portable Applications Power Management Functions DMP213DUFA 25V P-CHANNEL ENHANCEMENT MODE MOSFET Features 0.4mm Ultra Low Profile Package for Thin Application 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 Low VGS(th), Can be Driven Directly From a Battery Low RDS(on) ESD Protected Gate (>6kV Human Body Mode) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: X2-DFN0806-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.00043 grams (approximate) X2-DFN0806-3 Drain Gate Body Diode ESD HBM >6kV Bottom View Top View Package Pin Configuration Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMP213DUFA-7B Case X2-DFN0806-3 Packaging 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/qua...




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