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DMS3019SSD Datasheet

Part Number DMS3019SSD
Manufacturers Diodes
Logo Diodes
Description ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet DMS3019SSD DatasheetDMS3019SSD Datasheet (PDF)

DMS3019SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(on) – minimizes conduction loss • Low VSD – reducing the losses due to body diode construction • Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencie.

  DMS3019SSD   DMS3019SSD






ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMS3019SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(on) – minimizes conduction loss • Low VSD – reducing the losses due to body diode construction • Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Weight: 0.072 grams (approximate) Top View D2 G2 D2 S2/D1 G1 S2/D.


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