isc N-Channel MOSFET Transistor
DMTH10H010SCT
FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage-
: VDSS=...
isc N-Channel
MOSFET Transistor
DMTH10H010SCT
FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 9.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source
Voltage Gate-Source
Voltage-Continuous
100
V
±20
V
ID
Drain Current-Continuous
100
A
IDM
Drain Current-Single Pluse
400
A
PD
Total Dissipation @TC=25℃
187
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.8
℃/W
isc website：www.iscsemi.com
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 13A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 80V; VGS= 0
VSD
Forward On-
Voltage
IS= 13A; VGS= 0
DMTH10H010SCT
MIN MAX UNIT
100
V
2.0
4.0
V
9.5
mΩ
±100 nA
1.0
μA
1.3
V
NOTICE： ISC reserves the rights to make changes o...
