DN500F

Semiconductor DN500F NPN Silicon Transistor Description Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA) Suitable for low voltage large current drivers Complementary pair with DP500F Switching Application Ordering Information Type NO. DN500F : Marking N5 monthly code Package Code SOT-89 Outline Dimensions 4.0 0.50±0.1 -0.3 +0.5 unit : mm 2.5 +0.2 -0.3 1.00±0.3 3 1.82±0.05 -0.1 +0.2 2 1 0.42±0.05 0.52±0.05 0.15 Typ. 1.5 -0.1 +0.2 4.5 0.42 +0.04 0~0.1 -0.02 PIN Connections 1. Base 2. Collector 3. Emitter KST-8012-002 1 DN500F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VC B O VC E O VE B O IC PC PC * Ratings 15 12 5 5 0.5 2 150 -55~150 Unit V V V A W °C °C Tj T stg * : When mounted on 40× 40× 0.8mm ceramic substate Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VBE(sat) fT C ob Test Condition IC =50µA, IE=0 IC =1mA, IB=0 IE=50µA, IC =0 VCB=15V, IE=0 VEB=4V, IC =0 VCE=2V, IC =500mA VCE=2V, IC =3A IC =3A,...