DP8205B

DP8205B www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev1.0 DP8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 20 V 6.5A < 22mΩ < 27mΩ SOT23-6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ±12 6.5 25 6.5 1.25 -55 To 150 Thermal Characteristic Parameter Thermal Resistance,Junction-to-Ambient a Symbol RθJA Limit 100 DEVELOPER MICROELECTRONICS Unit V V A A A W ℃ Unit ℃/W １ Dual N-Channel Enhancement Power MOSFET El...