Diode. DSEI12-10A Datasheet

DSEI12-10A Datasheet PDF


DSEI12-10A
Fast Recovery
Epitaxial Diode (FRED)
VRSM
V
1000
VRRM
V
1000
Type
DSEI 12-10A
A
DSEI 12-10A
IFAV = 12 A
VRRM = 1000 V
trr = 50 s
C TO-220 AC
C
A
A = Anode, C = Cathode
C
Symbol
IFRMS
IFAVM 
IFRM
IFSM
I2t
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
TVJ = TVJM
TC = 100°C; rectangular, d = 0.5
tp < 10 µs; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C
mounting torque
typical
Maximum Ratings
25 A
12 A
150 A
75 A
80
65 A
70
28 A2s
27
21 A2s
20
-40...+150
150
-40...+150
°C
°C
°C
78 W
0.4...0.6 Nm
2g
Symbol Conditions
Characteristic Values
typ. max.
IR
VR = VRRM
TVJ = 25°C
VR = 0.8·VRRM TVJ = 25°C
VR = 0.8·VRRM TVJ = 125°C
250 µA
150 µA
4 mA
VF
IF = 12 A
TVJ = 150°C
TVJ = 25°C
2.1 V
2.7 V
VT0 For power-loss calculations only
rT TVJ = TVJM
1.67 V
33.6 mW
RthJC
RthCH
RthJA
1.6 K/W
0.5 K/W
60 K/W
trr
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C
50 60 ns
IRM VR = 540 V; IF = 12 A; -diF/dt = 100 A/µs
L < 0.05 µH; TVJ = 100°C
6.5 7.2
A
 IFAVM rating includes reverse blocking losses at TVJM. VR = 0.8·VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Features
• International standard package
JEDEC TO-220 AC
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
• Operating at lower temperature or
space saving by reduced cooling
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Part DSEI12-10A
Description Fast Recovery Epitaxial Diode
Feature DSEI12-10A; Fast Recovery Epitaxial Diode (FRED) VRSM V 1000 VRRM V 1000 Type DSEI 12-10A A DSEI 12-10A IFA.
Manufacture IXYS
Datasheet
Download DSEI12-10A Datasheet


Fast Recovery Diode DSEI12-10A FEATURES ·With TO-220 packa DSEI12-10A Datasheet
Fast Recovery Epitaxial Diode (FRED) VRSM V 1000 VRRM V 10 DSEI12-10A Datasheet





DSEI12-10A
DSEI 12-10A
40
30
20
TVJ = 150°C
100°C
25°C
10
2.0
TVJ = 100°C
VR = 540 V
1.5
IF = 12 A
1.0
24 A
12 A
6A
0.5
max
0
0123
VF [V]
Fig. 1 Forward current
versus voltage drop
1.4
1.2
typ.
0.0
1
10 100
-diF/dt [A/µs]
Fig. 2 Recovery charge
versus -diF /dt
1000
0.6
0.5 max
TVJ = 100°C
VR = 540 V
1.0
0.8
0.6
IRM
Qr
0.4
IF = 12 A
0.3
24 A
12 A
6A
0.2
0.4 0.1
0.2
0
40 80 120
TVJ [°C]
160
Fig. 4 Dynamic parameters versus
junction temperature
0.0
0
typ.
100 200 300
-diF /dt [A/µs]
400
Fig. 5 Recovery time versus -diF /dt
2.0
30 TVJ = 100°C
25 VR = 540 V
20
IF = 12 A
24 A
12 A
15 6 A
max
typ.
10
5
0
0 100 200 300 400
-diF/dt [A/µs]
Fig. 3 Peak reverse current
versus -diF /dt
20 1000
16 800
12 600
TVJ = 125°C
IF = 14 A
8 400
4
VFR
200
tfr
00
0 100 200 300 400
diF /dt [A/µs]
Fig. 6 Peak forward voltage
versus diF /dt
1.6
1.2
0.8
0.4
0.0
0.001
0.01
0.1
t [s]
DSEI 12-10A
1 10
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
-3



DSEI12-10A
Dimensions TO-220 AC
DSEI 12-10A
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
-3






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