DSL70

Silicon TVS diodes Array ESD / transient protection of e.g. ADSL, VDSL, ISDN, WAN, LAN, I²C Bus, Microcontroller Inputs, Video and other high-speed data lines in telecom applications: IEC61000-4-2 (ESD): ± 15 kV (Air / Contact) IEC61000-4-4 (EFT): 4 kV / 80 A (5/50 ns) IEC61000-4-5 (Lightning): 27 A (8/20 µs) Very low capacitance Extremly low reverse current < 5 nA Pb-free (RoHS compliant) package DSL70 DSL70 4 D3 D4 3 D2 D1 12 Type DSL70 Package SOT143 Configuration 2 channel, rail to rail Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol ESD contact discharge per diode1) Peak pulse current (tp = 8 / 20 µs)2) Peak pulse power (tp = 8 / 20 µs) VESD Ipp Ppk Operating temperature range Storage temperature Top Tstg 1VESD according to IEC61000-4-2 2Ipp according to IEC61000-4-5 Value 15 27 245 -55...125 -65...150 Marking E4s Unit kV A W °C 1 2011-06-17 DSL70 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. Characteristics - Reverse working voltage Reverse current VR = 50 V Forward clamping voltage1) IPP = 1 A, tP = 8/20 µs IPP = 10 A, tP = 8/20 µs IPP = 24 A, tP = 8/20 µs IPP = 27 A, tP = 8/20 µs VRWM IR VFC - - 50 - -5 - 1 1.5 - 2.5 3 - 56 - 69 Diode capacitance VR = 0 V, f = 1 MHz, between I/0 and GND VR = 0 V, f = 1 MHz, between I/0 pins CT - 2.5 5 - 1.25 2.5 1IPP according to IEC61000-4-5 Unit V nA V pF 2 2011-06-17 DSL70 Power derating curve Ppk = ƒ ...