DTDG14GP
1A/60V Digital Transistor (with built-in resistor and zener diode)
Parameter VCEO IC R
Value 60±10V
1A 10kΩ...
DTDG14GP
1A/60V Digital Transistor (with built-in resistor and zener diode)
Parameter VCEO IC R
Value 60±10V
1A 10kΩ
lFeatures
1)High hFE. 300(Min.) (VCE/IC=2V/0.5A) 2)Low saturation
voltage. (VCE(sat)=400mV at IC/IB=500mA/5mA) 3)Built-in zener diode gives strong protection against reverse surge by L-load (an inductive load).
lOutline
SOT-89
SC-62
(MPT3)
lInner circuit
Datasheet
lApplication DRIVER
lPackaging specifications
Part No.
Package
DTDG14GP
SOT-89 (MPT3)
Package size
4540
Taping code
Reel size Tape width (mm) (mm)
Basic ordering unit.(pcs)
Marking
T100
180
12
1000
E01
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20150925 - Rev.001
DTDG14GP
lAbsolute maximum ratings (Ta = 25°C) Parameter
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage
Collector current
Power dissipation
Junction temperature Range of storage temperature
Datasheet
Symbol
Values
Unit
VCBO
60±10
V
VCEO
60±10
V
VEBO
5
V
IC
1
A
ICP*1
2
A
PD*2
0.5
W
PD*3
2.0
W
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = 50μA
50
-
70
V
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdow...
