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DC COMPONENTS CO., LTD.
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DXT2222A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITA...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DXT2222A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and high -speed, medium-power switching applications.
SOT-89
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating 75 40 6 600 1.2 +150 -55 to +150 Unit V V V mA W
o o
.167(4.25) .159(4.05) 1 2 3
.102(2.60) .095(2.40)
.020(0.51) .014(0.36)
.060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40)
.016(0.41) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 hFE4 hFE5 hFE6
Min 75 40 6 35 50 75 100 40 50 300
Typ -
Max 10 10 50 0.3 1 1.2 2 300 -
Unit V V V nA nA nA V V V V MHz IC=10µA
Test Conditions IC=10mA IE=10µA VCB=60V VCB=60V, VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=100µA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V IC=150mA, VCE=1V VCE=20V, f=100MHz, IC=20mA
Collector-Base Breakdown Volatge Co...