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DC COMPONENTS CO., LTD.
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DXT5551
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAX...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DXT5551
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring high breakdown
voltages.
SOT-89
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 180 160 6 500 1.2 +150 -55 to +150 Unit V V V mA W
o o
.167(4.25) .159(4.05) 1 2 3
.102(2.60) .095(2.40)
.020(0.51) .014(0.36)
.060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40)
.016(0.41) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob 380µs, Duty Cycle 2%
Min 180 160 6 80 80 30 100 -
Typ -
Max 50 50 0.15 0.2 1 1 250 300 6
Unit V V V nA nA V V V V MHz pF
Test Conditions IC=100µA IC=1mA IE=10µA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=1mA, VCE=5V IC=10mA, VCE=5V IC=50mA, VCE=5V VCE=10V, f=100MHz, IC=10mA VCB=10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown Volatge Collector Cutof...