TRANSISTOR. DXTA92 Datasheet

DXTA92 Datasheet PDF

Part DXTA92
Description PNP SURFACE MOUNT TRANSISTOR
Feature NEW PRODUCT DXTA92 PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Com.
Manufacture Diodes
Datasheet
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NEW PRODUCT DXTA92 PNP SURFACE MOUNT TRANSISTOR Features • DXTA92 Datasheet





DXTA92
DXTA92
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DXTA42)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
SOT89-3L
COLLECTOR
3 E 2,4
C4 2 C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-300
-300
-5
-500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
Tj, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-off Current
Emitter-Base Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
Output Capacitance
Symbol Min Typ Max Unit
Test Conditions
V(BR)CBO -300
V IC = -100μA, IE = 0
V(BR)CEO -300
V IC = -1mA, IB = 0
V(BR)EBO
-5
V IE = -100μA, IC = 0
ICBO
-0.25
μA VCB = -200V, IE = 0
IEBO
-0.1 μA VEB = -3V, IC = 0A
VCE(SAT)
VBE(SAT)
hFE
25
40
25
-0.5 V IC = -20mA, IB = -2mA
-0.9 V IC = -20mA, IB = -2mA
⎯⎯
IC = -1mA, VCE = -10V
⎯ ⎯ V IC = -10mA, VCE = -10V
⎯⎯
IC = -30mA, VCE = -10V
fT
50
MHz
IC = -10mA, VCE = -20V,
f = 100MHz
Cobo
6 pF VCB = -20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31159 Rev. 4 - 2
1 of 4
www.diodes.com
DXTA92
© Diodes Incorporated



DXTA92
RθJA = 125°C
DS31159 Rev. 4 - 2
2 of 4
www.diodes.com
DXTA92
© Diodes Incorporated




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