E50N06

E 50N06 HEXFET® Power MOSFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements VDSS = 60V ID25 = 50A RDS(ON) = 0.022 Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter ID@TC=25 ْC Continuous Drain Current, VGS@10V ID@TC=100ْC Continuous Drain Current, VGS@10V IDM Pulsed Drain Current PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max. 50* 36 200 140 1.0 ±20 100 4.5 55 to +175 300(1.6mm from case) 10 Ibf in(1.1N m) Pin1–Gate Pin2–Drain Pin3–Source Units A W W/ ْC V mJ V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case 1.0 RθCS Case-to-Sink, Flat, Greased Surface 0.50 RθJA Junction-to-Ambient 62 Units ْC/W 1 E 50N06 HEXFET® Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) ...