EB202

Shenzhen SYS Semiconductors Co., LTD. EB SERIES TRANSISTORS FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST Product Specification EB202 WIDE SOA Absolute Maximum Ratings Tc=25°C PARAMETER SYMBOL VALUE Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj 600 400 9 1.0 12 150 Storage Temperature Tstg -65-150 UNIT V V V A W °C °C TO-92 Electronic Characteristics CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Voltage Emitter- Base Voltage Tc=25°C SYMBOL ICBO ICEO VCEO VEBO Collector-Emitter Saturation Voltage Vcesat Base-Emitter Saturation Voltage Vbesat DC Current Gain hFE Storage Time Falling Time tS tf TEST CONDITION VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.2A,IB=0.04A IC=0.75A,IB=0.25A IC=0.2A,IB=0.04A VCE=5V,IC=1mA VCE=10V,IC=0.1A VCE=5V,IC=1A VCC=5V, IC=0.1A, (UI9600) MIN 400 9 7 10 5 2.0 MAX 100 250 0.30 0.50 1.2 40 UNIT A A V V V V 4.5 µS 1.0 SYS semiconductors 2005.12 1 Shenzhen SYS Semiconductors Co., LTD. EB SERIES TRANSISTORS Product Specification EB202 Ic(A) 10 1 0.1 0.01 0.001 1 hFE 100 SOA (DC) Vce(V) 10 100 1000 hFE - Ic % 120 100 80 60 40 20 0 0 Pc Tj IS/B Ptot 50 100 150 Tj( )200 hFE 100 hFE - Ic Tj=125 Tj=25 10 Tj=− 40 Tj=125 Tj=25 10 Tj=− 40 Vce=1.5V 1 0.01 0.1 Ic(A) 1 10 Vces(v) 10 hFE=5 1 Vces ...