EC-10N16/20 & EC-10P16/20
HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs
T03
...
EC-10N16/20 & EC-10P16/20
HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL
MOSFETs
T03
8.2 1.57 + 0.5
11.5 + 0.3
25.00 10.85 + 0.1
3
30.15 + 0.15 16.90 + 0.15
39.00 19.50 + 0.05
1.0 + 0.05
21
R 1.50 max
MECHANICAL DATA
R4.3 + 0.1
1. GATE 2. DRAIN 3. SOURCE
dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
(EC-10)16 (EC-10)20
VDSX VGSS
ID ID(PK)
Drain – Source
Voltage Gate – Source
Voltage Continuous Drain Current Body Drain Diode
160V
200V
+- 14V 8A
8A
PD Total Power Dissipation @ (T case = 25°C) C Tstg Storage Temperature Range
125W -55 to 150°C
Tj R0JC
Maximum Operating Junction Temperature Thermal Resistance Junction - case
150°C 1.0°C/W
Tel: +44 (0)1702 543500
Fax: +44 (0)1702 543700
1
EC-10N16/20 & EC-10P16/20
T03P/T0247
2.0+ 0.5
5.0+ 0.31
15.88+ 0.4
20.13 +0.33
6.15 3.68+ 1.3
MECHANICAL DATA
0.59+ 0.2 2.4 + 0.2
20.06 +0.26
123
4.5
3.0 + 0.13 1.89+ 0.24
1.2 + 0.2
5.25
1. GATE 2. SOURCE (CASE) 3. DRAIN
dimensions in mm
STATIC CHARACTERISTICS
Characteristic
(TC= 25°C unless otherwise stated)
Test Conditions
MIN TYP MAX UNIT
BVDSX
Drain – Source Breakdown
Voltage
VGS = -10V ID = 10mA
(EC-10)16 (EC-10)20
160 200
V V
BVGSS V GS(OFF) V DS(SAT)* I DSX
Gate – Source Breakdown
Voltage VDS = 0
Gate - Source Cut-O
Voltage Drain - Source Saturation
Voltage
VDS = 10V VGD = 0
Drain - Source Cut - O Current
VGS = -10V
IG=-+100uA
ID = 100mA
ID = 8A
VDS = 160V (EC-10)1...