EC2612

EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection.Only gate and drain wires bounding are required. ¦ Chip size : 0.63 x 0.37 x 0.1 mm Main Features ¦ 0.8dB minimum noise figure @ 18GHz ¦ 1.5dB minimum noise figure @ 40GHz ¦ 12dB associated gain @ 18GHz ¦ 9.5dB associated gain @ 40GHz D: Drain G: Gate S: Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure (F=40GHz) Associated gain (F=40GHz) 8 Min 10 Typ 40 1.5 9.5 Max 60 1.9 Unit mA dB dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Electrical Characteristics Tamb = +25°C Ref. : DSEC26120077 -17-Marc-00 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 EC2612 Symbol Idss Parameter Saturated drain current 40GHz Super Low Noise PHEMT Test Conditions Vds = 2V Vgs = 0V Vds = 2V Ids = 0.1mA Vds = 2V Ids = 25mA Vgsd = -2V Min 10 Typ...