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EC3201C Datasheet

Part Number EC3201C
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Low-Frequency General-Purpose Amplifier Applications
Datasheet EC3201C DatasheetEC3201C Datasheet (PDF)

Ordering number : ENN6963A EC3101C / EC3201C PNP / NPN Epitaxial Planar Silicon Transistors EC3101C / EC3201C Features • Low-Frequency General-Purpose Amplifier Applications Ultraminiature package facilitates miniaturization in end products. Specifications ( ) : EC3101C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperatur.

  EC3201C   EC3201C






Part Number EC3201C
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Low-Frequency General-Purpose Amplifier Applications
Datasheet EC3201C DatasheetEC3201C Datasheet (PDF)

Ordering number : ENN6963A EC3101C / EC3201C PNP / NPN Epitaxial Planar Silicon Transistors EC3101C / EC3201C Features • Low-Frequency General-Purpose Amplifier Applications Ultraminiature package facilitates miniaturization in end products. Specifications ( ) : EC3101C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperatur.

  EC3201C   EC3201C







Low-Frequency General-Purpose Amplifier Applications

Ordering number : ENN6963A EC3101C / EC3201C PNP / NPN Epitaxial Planar Silicon Transistors EC3101C / EC3201C Features • Low-Frequency General-Purpose Amplifier Applications Ultraminiature package facilitates miniaturization in end products. Specifications ( ) : EC3101C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings (--)55 (--)50 (--)6 (--)150 (--)300 (--)30 150 150 --55 to +150 Unit V V V mA mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(--)35V, IE=0 VEB=(-)4V, IC=0 VCE=(--)6V, IC=(--)1mA VCE=(--)6V, IC=(--)10mA VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0 (-)55 (-)50 (--)6 200 (180)200 (2.9)1.7 (--0.12)0.08 (--)0.8 (--)0.4 (--)1.0 Ratings min typ max (--)0.1 (--)0.1 600 MHz pF V V V V V Unit µA µA Marking EC3101C : G EC3201C : H Any and all SANYO p.


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