EC3H02B

Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Ultrasmall (1006size), slim (0.5mm) leadless package. Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.05 1 0.4 0.15 2 0.05 1.0 0.65 0.25 3 0.5 0.25 0.05 0.05 (Bottom view) 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 0.5 Ratings 20 10 2 70 100 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Cre | S21e |2 1 | S21e |2 2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz 9 100 5 7 0.7 0.45 12 8.5 1.0 1.8 1.2 Conditions Ratings min typ max 1.0 10 180 GHz pF pF dB dB dB Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle ...