Ordering number : ENN6580
EC3H04C
NPN Epitaxial Planar Silicon Transistor
EC3H04C
High-Frequency Low-Noise Amplifier a...
Ordering number : ENN6580
EC3H04C
NPN Epitaxial Planar Silicon Transistor
EC3H04C
High-Frequency Low-Noise Amplifier and OSC Applications
Features
Package Dimensions
unit : mm 2184
[EC3H04C]
0.5
0.3 0.05 0.6
Low noise : NF=1.7dB typ (f=2GHz). Hige cut-off frequency : fT=8GHz typ (VCE=1V). Low operating
voltage. Ultraminiature (1008 size) and thin (0.6mm) leadless package.
0.2 0.05
0.2
3
0.05
4
1.0
2
1
0.3
(Bottom View)
0.05
1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions
0.8
0.6
Ratings 9 6 2 100 100 150 --55 to +150
Unit V V V mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Cre S21e21 S21e22 NF VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, I C=10mA VCE=1V, I C=10mA VCB=1V, f=1MHz VCB=1V, f=1MHz VCE=1V, IC=10mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=1V, IC=10mA, f=2GHz 4 100 6 8 1.1 0.85 5 12 1.7 2.5 1.5 Conditions Ratings min typ max 1.0 10 180 GHz pF pF dB dB dB Unit µA µA
Any and all SANYO products described or contained herein do not have specifications that can han...