EC4301C

Ordering number : ENN7014 EC4301C P-Channel Silicon MOSFET EC4301C Small Signal Switch and Interface Applications Features Package Dimensions unit : mm 2197 [EC4301C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 3 0.05 4 0.6 1.0 2 1 0.3 0.05 (Bottom view) 0.3 0.05 0.2 0.05 0.2 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : E-CSP1008-4 0.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.6 Ratings -30 ± 10 --0.1 --0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0 VDS=--30V, VGS=0 VGS=± 8V, VDS=0 VDS=--10V, ID=--100µA VDS=--10V, ID=--50mA ID=-50mA, VGS=--4V ID=-30mA, VGS=--2.5V ID=-1mA, VGS=--1.5V --0.4 80 110 8 11 27 10.4 15.4 54 Ratings min --30 --10 ± 10 --1.4 typ max Unit V µA µA V mS Ω Ω Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, su...