Ordering number : ENA1430B
ECH8310
P-Channel Power MOSFET
–30V, –9A, 17mΩ, Single ECH8
http://onsemi.com
Features
•...
Ordering number : ENA1430B
ECH8310
P-Channel Power
MOSFET
–30V, –9A, 17mΩ, Single ECH8
http://onsemi.com
Features
4V drive Halogen free compliance Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm)
Ratings --30 ±20 --9 --60 1.5 150
--55 to +150
Unit V V A A W °C °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Package Dimensions unit : mm (typ) 7011A-002
Top View 2.9
85
ECH8310-TL-H
0.15 0 to 0.02
Product & Package Information
Package
: ECH8
JEITA, JEDEC
:-
Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
JM
Lot No.
TL
2.8 0.9 0.25 2.3 0.25
1 0.65
4 0.3
Bottom View
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain
ECH8
Electrical Connection
87 6 5
12 3 4
0.07
ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014 March, 2014
30714HK/60612TKIM/O1409TKIM TC-00002092 PE No. A1430-1/5
ECH8310
Electrical Characteristics...