ECH8601M

Ordering number : ENA1174A ECH8601M N-Channel Power MOSFET 24V, 8A, 23mΩ, Dual ECH8 http://onsemi.com Features Low ON-resistance 2.5V drive Common-drain type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm2×0.8mm) 1unit When mounted on ceramic substrate (1000mm2×0.8mm) Ratings 24 ±12 8 60 1.5 1.6 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-003 Top View 2.9 85 ECH8601M-TL-H 0.15 0 to 0.02 Product & Package Information Package : ECH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TL TL Lot No. 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 Electrical Connection 8765 12...