ECW20P20-Z
P CHANNEL LATERAL MOSFET
P Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers High voltage rating - 200V TO-264 plastic package Enhanced oscillation suppression in multi-device applications Complementary N-channel available – ECW20N20
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS Drain – Source Voltage
-200V
VGSS Gate – Source Voltage
+/-20V
ID Continuous Drain Current
-16A
IDR Body Dr.
P-CHANNEL LATERAL MOSFET
ECW20P20-Z
P CHANNEL LATERAL MOSFET
P Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers High voltage rating - 200V TO-264 plastic package Enhanced oscillation suppression in multi-device applications Complementary N-channel available – ECW20N20
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS Drain – Source Voltage
-200V
VGSS Gate – Source Voltage
+/-20V
ID Continuous Drain Current
-16A
IDR Body Drain Diode Current
-16A
PD Allowable Power Dissipation* Tcase = 25°C Tch Channel Temperature
250W 150°C
Tstg Storage Temperature Range
-55 to +150°C
*Thermal Resistance, Junction To Case
0.5 deg/watt
WARNING: These lateral mosfets do not include a G-S protection network and care must therefore be taken with static handling precautions and the appropriate protection in the ampli er circuit.
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
1
ECW20P20-Z
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols BVDSX
I GSS VGS(o ) VDS(sat)* |yfs|* IDSX
Parameters Drain-Source Breakdown Voltage
Gate-Source Leakage Current Gate-Source Cut-o Voltage Drain-Source Saturation Voltage Forward Transfer Admittance Drain-Source Cut-O Current
Test Conditions VGS = -10V ID = -10mA
Min. Typ Max. Units -200 V
VDS = 0
VGS = ±20V
VDS = -10V ID = -100mA -0.1
VG D = 0
.