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ECW20P20-Z Datasheet

Part Number ECW20P20-Z
Manufacturers EXICON
Logo EXICON
Description P-CHANNEL LATERAL MOSFET
Datasheet ECW20P20-Z DatasheetECW20P20-Z Datasheet (PDF)

ECW20P20-Z P CHANNEL LATERAL MOSFET P Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers High voltage rating - 200V TO-264 plastic package Enhanced oscillation suppression in multi-device applications Complementary N-channel available – ECW20N20 ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated) VDSS Drain – Source Voltage -200V VGSS Gate – Source Voltage +/-20V ID Continuous Drain Current -16A IDR Body Dr.

  ECW20P20-Z   ECW20P20-Z






P-CHANNEL LATERAL MOSFET

ECW20P20-Z P CHANNEL LATERAL MOSFET P Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers High voltage rating - 200V TO-264 plastic package Enhanced oscillation suppression in multi-device applications Complementary N-channel available – ECW20N20 ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated) VDSS Drain – Source Voltage -200V VGSS Gate – Source Voltage +/-20V ID Continuous Drain Current -16A IDR Body Drain Diode Current -16A PD Allowable Power Dissipation* Tcase = 25°C Tch Channel Temperature 250W 150°C Tstg Storage Temperature Range -55 to +150°C *Thermal Resistance, Junction To Case 0.5 deg/watt WARNING: These lateral mosfets do not include a G-S protection network and care must therefore be taken with static handling precautions and the appropriate protection in the ampli er circuit. www.exicon.info Exicon products are available at www.profusionplc.com Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000 ReRve:v3:.31.1 1 ECW20P20-Z ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols BVDSX I GSS VGS(o ) VDS(sat)* |yfs|* IDSX Parameters Drain-Source Breakdown Voltage Gate-Source Leakage Current Gate-Source Cut-o Voltage Drain-Source Saturation Voltage Forward Transfer Admittance Drain-Source Cut-O Current Test Conditions VGS = -10V      ID = -10mA Min. Typ Max. Units -200 V VDS = 0 VGS = ±20V VDS = -10V ID = -100mA -0.1 VG  D = 0 .


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