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EDI88512C

Microsemi

512Kx8 Monolithic SRAM

EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static  Random Access Memory • Access Times of 70,...


Microsemi

EDI88512C

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Description
EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static  Random Access Memory Access Times of 70, 85, 100ns Data Retention Function (LP version) TTL Compatible Inputs and Outputs Fully Static, No Clocks  32 lead JEDEC Approved Evolutionary Pinout Ceramic Sidebrazed 600 mil DIP (Package 9) Ceramic SOJ (Package 140)  Single +5V (±10%) Supply Operation The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher order addresses. A Low Power version with Data Retention (EDI88512LP) is also available for battery backed applications. Military product is available compliant to Appendix A of MIL-PRF-38535. * This product is subject to change without notice. FIGURE 1 – PIN CONFIGURATION 32 PIN TOP VIEW A18 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 I/O0 13 I/O1 14 I/O2 15 Vss 16 32 pin Evolutionary 32 Vcc 31 A15 30 A17 29 WE# 28 A13 27 A8 26 A9 25 A11 24 OE# 23 A10 22 CS# 21 I/O7 20 I/O6 19 I/O5 18 I/O4 17 I/O3 I/O0-7 A0-18 WE# CS# OE# VCC VSS NC PIN DESCRIPTION Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power (+5V ±10%) Ground Not Connected A0-18 WE# CS# OE# BLOCK DIAGRAM Memory Array Address Buffer Address Decoder I/O Circuits I/O0-7 Microsemi Corporati...




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