EDS2532EEBH-75TT

www.DataSheet4U.com DATA SHEET 256M bits SDRAM WTR (Wide Temperature Range) EDS2532EEBH-75TT (8M words × 32 bits) Specifications Density: 256M bits Organization  2M words × 32 bits × 4 banks Package: 90-ball FBGA  Lead-free (RoHS compliant) Power supply: VDD, VDDQ = 1.8V ± 0.1V Clock frequency: 133MHz (max.) 2KB page size  Row address: A0 to A11  Column address: A0 to A8 Four internal banks for concurrent operation Interface: LVCMOS Burst lengths (BL): 1, 2, 4, 8, full page Burst type (BT):  Sequential (1, 2, 4, 8, full page)  Interleave (1, 2, 4, 8) /CAS Latency (CL): 2, 3 Precharge: auto precharge operation for each burst access Driver strength: half/quarter Refresh: auto-refresh, self-refresh Refresh cycles: 4096 cycles/64ms  Average refresh period: 15.6µs Operating ambient temperature range  TA = –20°C to +85°C Pin Configurations /xxx indicates active low signal. 90-ball FBGA 1 2 3 4 5 6 7 8 9 EO Features A DQ26 DQ24 VSS VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC A2 A10 NC BA0 /CAS VDD DQ6 DQ1 B DQ28 VDDQ VSSQ C VSSQ DQ27 DQ25 D VSSQ DQ29 DQ30 E VDDQ DQ31 NC A3 A6 NC A9 NC VSS DQ16 VSSQ DQM2 VDD A0 BA1 /CS A1 A11 /RAS F VSS DQM3 ×32 organization Single pulsed /RAS Burst read/write operation and burst read/single write operation capability Byte control by DQM Wide temperature range  TA = –20°C to +85°C Document No. E0910E10 (Ver. 1.0) Date Published May 2006 (K) Japan Printed in Japan URL: h...