EDS2532EGBH-TT

www.DataSheet4U.com PRELIMINARY DATA SHEET 256M bits SDRAM WTR (Wide Temperature Range) EDS2532EGBH-TT (8M words × 32 bits) Specifications Density: 256M bits Organization  2M words × 32 bits × 4 banks Package: 90-ball FBGA  Lead-free (RoHS compliant) and Halogen-free Power supply: VDD, VDDQ = 1.8V ± 0.1V Clock frequency: 166MHz/133MHz (max.) 2KB page size  Row address: A0 to A11  Column address: A0 to A8 Four internal banks for concurrent operation Interface: LVCMOS Burst lengths (BL): 1, 2, 4, 8, full page Burst type (BT):  Sequential (1, 2, 4, 8, full page)  Interleave (1, 2, 4, 8) /CAS Latency (CL): 3 Precharge: auto precharge option for each burst access Driver strength: normal, 1/2, 1/4, 1/8 Refresh: auto-refresh, self-refresh Refresh cycles: 4096 cycles/64ms  Average refresh period: 15.6µs Operating ambient temperature range  TA = –20°C to +85°C Pin Configurations /xxx indicates active low signal. 90-ball FBGA 1 2 3 4 5 6 7 8 9 A DQ26 DQ24 VSS VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC A2 A10 NC BA0 /CAS VDD DQ6 DQ1 DQ16 VSSQ DQM2 VDD A0 BA1 /CS A1 A11 /RAS B DQ28 VDDQ VSSQ C VSSQ DQ27 DQ25 D VSSQ DQ29 DQ30 E VDDQ DQ31 NC A3 A6 NC A9 NC VSS F VSS DQM3 G A4 A5 A8 CKE NC H A7 J CLK K DQM1 /WE DQM0 DQ7 VSSQ DQ5 VDDQ DQ3 VDDQ L VDDQ DQ8 M VSSQ DQ10 DQ9 N VSSQ DQ12 DQ14 P DQ11 VDDQ VSSQ VDDQ VSSQ DQ4 VDD DQ0 DQ2 R DQ13 DQ15 VSS Features ×32 organization Single pulsed /RAS Burst read/write ope...