Photomicrosensor (Reflective)
EE-SY110
Be sure to read Precautions on page 24.
■ Dimensions
Note: All units are in mill...
Photomicrosensor (Reflective)
EE-SY110
Be sure to read Precautions on page 24.
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Four, 0.5
+0.2 - 0.3
Four, R1.5
15.2±0.2
Four, 0.25 15 to 18
Internal Circuit
A C Unless otherwise specified, the tolerances are as shown below.
KE
Terminal No. A K C E
Name Anode Cathode Collector Emitter
Dimensions 3 mm max. 3 < mm ≤ 6 6 < mm ≤ 10 10 < mm ≤ 18 18 < mm ≤ 30
Tolerance ±0.2 ±0.24 ±0.29 ±0.35 ±0.42
■ Features
Compact reflective model with a molded housing. Recommended sensing distance = 5.0 mm
■ Absolute Maximum Ratings (Ta = 25°C)
Emitter
Item Forward current
Pulse forward current
Reverse
voltage
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipation
Ambient tem- Operating
perature
Storage
Soldering temperature
Symbol IF
IFP
VR VCEO
Rated value
50 mA (see note 1)
1A (see note 2)
4V
30 V
VECO
---
IC 20 mA
PC 100 mW (see note 1)
Topr –40°C to 85°C
Tstg –40°C to 85°C
Tsol 260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Emitter Detector
Item Forward
voltage Reverse current Peak emission wavelength Light current
Symbol VF IR λP IL
Value 1.2 V typ., 1.5 V max. 0.01 μA typ., 10 μA max. 940 nm typ. 200 μA min., 2,000 μA m...