www.DataSheet.co.kr
Ordering number : ENA1477A
EFC4612R
SANYO Semiconductors
DATA SHEET
EFC4612R
Features
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www.DataSheet.co.kr
Ordering number : ENA1477A
EFC4612R
SANYO Semiconductors
DATA SHEET
EFC4612R
Features
N-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Source-to-Source
Voltage Gate-to-Source
Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Conditions Ratings 24 ±12 6 60 1.6 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Source-to-Source Breakdown
Voltage Zero-Gate
Voltage Source Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Symbol V(BR)SSS ISSS IGSS VGS(off) | yfs | Conditions IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=±8V, VSS=0V VSS=10V, IS=1mA VSS=10V, IS=3A Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 0.5 3.1 Ratings min 24 1 ±10 1.3 typ max Unit V μA μA V S
Marking : FN
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