EFC4612R

www.DataSheet.co.kr Ordering number : ENA1477A EFC4612R SANYO Semiconductors DATA SHEET EFC4612R Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Conditions Ratings 24 ±12 6 60 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)SSS ISSS IGSS VGS(off) | yfs | Conditions IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=±8V, VSS=0V VSS=10V, IS=1mA VSS=10V, IS=3A Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 0.5 3.1 Ratings min 24 1 ±10 1.3 typ max Unit V μA μA V S Marking : FN Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned...